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TYN 056 ---> TYN 1006
SCR
.HI .HI .HI
FEATURES GH SURGE CAPABILITY GH ON-STATE CURRENT GH STABILITY AND RELIABILITY
DESCRIPTION The TYN 056 ---> TYN 1006 Family Silicon Controlled Rectifiers are high performance glass passivated chips technology. This general purpose Family Silicon Controlled Rectifiers is designed for power supply up to 400Hz on resistive or inductive load. ABSOLUTE RATINGS (limiting values)
Symbol IT(RMS) IT(AV) ITSM RMS on-state current (180 conduction angle) Average on-state current (180 conduction angle, single phase circuit) Non repetitive surge peak on-state current ( Tj initial = 25C ) I2t value Critical rate of rise of on-state current Gate supply : IG = 100 mA diG/dt = 1 A/s Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter 056 VDRM VRRM Repetitive peak off-state voltage Tj = 125 C 50 106 100 206 200 TYN 406 400 606 600 806 800 1006 1000 V Parameter Tc = 110 C Tc = 110 C tp = 8.3 ms tp = 10 ms I2t dI/dt Tstg Tj Tl tp = 10 ms Value 6 3.8 73 70 24.5 50 - 40 to + 150 - 40 to + 125 260 A2s A/s C C C Unit A A A
K A G
TO220AB (Plastic)
Symbol
Unit
March 1995
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TYN 056 ---> TYN 1006
THERMAL RESISTANCES
Symbol Rth (j-a) Junction to ambient Parameter Value 60 2.5 Unit C/W C/W
Rth (j-c) DC Junction to case for DC
GATE CHARACTERISTICS (maximum values)
PG (AV) = 1W PGM = 10W (tp = 20 s) IFGM = 4A (tp = 20 s) VRGM = 5 V.
ELECTRICAL CHARACTERISTICS
Symbol IGT VGT VGD tgt VD=12V VD=12V (DC) (DC) Test Conditions RL =33 RL =33 Tj=25C Tj=25C Tj= 110C Tj=25C MAX MAX MIN TYP Value 15 1.5 0.2 2 Unit mA V V s mA mA V mA
VD=VDRM R L=3.3k VD=VDRM IG = 40mA dIG/dt = 0.5A/s IG= 1.2 IGT IT= 100mA gate open
IL IH VTM IDRM IRRM dV/dt tq
Tj=25C Tj=25C Tj=25C Tj=25C Tj= 110C Tj= 110C Tj= 110C
TYP MAX MAX MAX
50 30 1.6 0.01 2
ITM= 12A tp= 380s VDRM VRRM Rated Rated
Linear slope up to VD =67%VDRM gate open VD=67%VDRM ITM= 12A VR= 25V dITM/dt=30 A/s dVD /dt= 50V/s
MIN TYP
200 70
V/s s
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TYN 056 ---> TYN 1006
Fig.1 : Maximum average power dissipation versus average on-state current. Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and T case) for different thermal resistances heatsink + contact.
P (W) Tcase (oC)
Rth = 0 o C/W 5 o C/W 10 o C/W 15 o C/W
P (W)
7
360
O
7 6
DC = 1 80 = 120 = 90 = 60
o o o o
6 5 4 3 2 1 0 0.0 0.5 1.0 1.5 2.0
= 30 o
-110
5 4
= 1 80
o
-115
3 2 -120
o
I T(AV)(A)
1
Tamb ( C)
2.5
3.0
3.5
4.0
4.5
5.0
0 0
20
40
60
80
100
120
-125 140
Fig.3 : Average temperature.
I T(AV) (A)
on-state
current
versus
case
Fig.4 : Relative variation of thermal impedance versus pulse duration.
Zth/Rth 1
DC
7 6
Zt h( j-c)
5 4
= 180
o
0.1
Zt h( j-a)
3 2 1 0
0 10 20 30 40 50 60 70
Tcase ( C)
o
tp (s)
80
90 100 110 120 130
0.01 1E-3
1E-2
1E-1
1E +0
1 E +1
1E +2 5 E+2
Fig.5 : Relative variation of gate trigger current versus junction temperature.
Fig.6 : Non repetitive surge peak on-state current versus number of cycles.
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TYN 056 ---> TYN 1006
Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t 10 ms, and corresponding value of I2t. Fig.8 : On-state characteristics (maximum values).
PACKAGE MECHANICAL DATA TO220AB Plastic
A H G I J D B
F P O L C
M =N =
Cooling method : C Marking : type number Weight : 2.3 g
Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as criti cal components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.
(c) 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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